S.E. Saddow: search on Z-Library

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1

Advanced Silicon Carbide Devices and Processing || Novel Developments and Challenges for the SiC Power Devices

Saddow, Stephen E., La Via, Francesco

Year:

2015

Language:

english

File:

PDF, 1.57 MB

english, 2015

2

Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C–SiC for MEMS Application

Anzalone, R., D'Arrigo, G., Camarda, M., Locke, C., Saddow, S. E., La Via, F.

Journal:

Journal of Microelectromechanical Systems

Year:

2011

Language:

english

File:

PDF, 608 KB

english, 2011

3

Advanced Silicon Carbide Devices and Processing || Silicon Carbide for Novel Quantum Technology Devices

Saddow, Stephen E., La Via, Francesco

Year:

2015

Language:

english

File:

PDF, 5.06 MB

english, 2015

4

Erratum: âValence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitridesâ [J. Vac. Sci. Technol. B 37, 041206 (2019)]

Koh, Donghyi, Banerjee, Sanjay K., Locke, Chris, Saddow, Stephen E., Brockman, Justin, Kuhn, Markus, King, Sean W.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2020

File:

PDF, 621 KB

2020

5

High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor

R.L. Myers, Y. Shishkin, O. Kordina, S.E. Saddow

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 187 KB

english, 2005

6

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

C.L. Frewin, C. Locke, J. Wang, P. Spagnol, S.E. Saddow

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 324 KB

english, 2009

7

Experimental and theoretical investigation of large output power Q-switched AlGaAs semiconductor lasers

Thedrez, B.J., Saddow, S.E., Liu, Y.Q., Wood, C., Wilson, R., Lee, C.H.

Journal:

IEEE Photonics Technology Letters

Year:

1993

Language:

english

File:

PDF, 375 KB

english, 1993

8

Cross-correlation measurement of the turn-on delay and pulsewidth of a Q-switched two-section semiconductor laser

Sheng-Hui Yang, Thedrez, B.J., Saddow, S.E., Wood, C., Wilson, R., Lee, C.H.

Journal:

IEEE Photonics Technology Letters

Year:

1993

Language:

english

File:

PDF, 428 KB

english, 1993

9

Silicon carbide: a versatile material for biosensor applications

Oliveros, Alexandra, Guiseppi-Elie, Anthony, Saddow, Stephen E.

Journal:

Biomedical Microdevices

Year:

2013

Language:

english

File:

PDF, 364 KB

english, 2013

10

A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations

Frewin, Christopher L., Coletti, Camilla, Riedl, Christian, Starke, Ulrich, Saddow, Stephen E.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 802 KB

english, 2009

11

Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

Severino, A., Frewin, C., Bongiorno, C., Anzalone, R., Saddow, S.E., La Via, F.

Journal:

Diamond and Related Materials

Year:

2009

Language:

english

File:

PDF, 1.20 MB

english, 2009

12

[IEEE 2013 IEEE Sensors - Baltimore, MD, USA (2013.11.3-2013.11.6)] 2013 IEEE SENSORS - Implantable SiC based RF antenna biosensor for continuous glucose monitoring

Afroz, S., Thomas, S. W., Mumcu, G., Saddow, S. E.

Year:

2013

Language:

english

File:

PDF, 854 KB

english, 2013

13

[IEEE Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004. - Punta Cana, Dominican Republic (November 3-5,2004)] Proceedings of the Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004. - Synthesis of nanoscale structures in single crystal silicon carbide by electron beam lithography

Bieber, J.A., Saddow, S.E., Moreno, W.A.

Year:

2004

Language:

english

File:

PDF, 1.80 MB

english, 2004

14

Silicon Carbide Waveguides for Optogenetic Neural Stimulation

Register, Joseph, Muller, Andreas, King, Justin, Weeber, Edwin, Frewin, Christopher L., Saddow, Stephen E.

Journal:

MRS Proceedings

Year:

2012

Language:

english

File:

PDF, 4.76 MB

english, 2012

15

Growth of 3C-SiC on Si: Influence of Process Pressure

Severino, Andrea, Frewin, Christopher L., Anzalone, Ruggero, Bongiorno, Corrado, Fiorenza, Patrick, D'Arrigo, Giuseppe, Giannazzo, Filippo, Foti, Gaetano, La Via, Francesco, Saddow, S.E.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 3.35 MB

english, 2009

16

High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

Myers-Ward, Rachael L., Shishkin, Y., Kordina, Olle, Haselbarth, I., Saddow, Stephen E.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 680 KB

english, 2006

17

Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC

Suleimanov, Yu.M., Lulu, S., Tarasov, I., Ostapenko, Sergei S., Heydemann, V.D., Roth, Matthew D., Kordina, Olle, MacMillan, Mike F., Saddow, Stephen E.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 537 KB

english, 2003

18

Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed Crystals

Saddow, Stephen E., Elkington, Troy, Smith, M.C.D.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 507 KB

2002

19

CVD of 6H-SiC on Non-Basal Quasi Polar Faces

Shishkin, Y., Rao, Shailaja P., Kordina, Olle, Agafonov, I., Maltsev, Andrei A., Hassan, Jawad, Henry, Anne, Moisson, Catherine, Saddow, Stephen E.

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 1.27 MB

english, 2007

20

Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes

Shamsuzzoha, M., Saddow, Stephen E., Schattner, T.E., Jin, Li, Dudley, Michael, Rendakova, S.V., Dmitriev, Vladimir

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 507 KB

2000

21

3C-SiC Hetero-Epitaxial Films for Sensors Fabrication

Anzalone, Ruggero, Severino, Andrea, Locke, Christopher, Rodilosso, Davide, Tringali, Cristina, Saddow, Stephen E., La Via, Francesco, D'Arrigo, Giuseppe

Journal:

Advances in Science and Technology

Year:

2008

Language:

english

File:

PDF, 563 KB

english, 2008

22

Spatially Resolved Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Wafers

Suleimanov, Yu. M., Lulu, S., Tarasov, I., Ostapenko, S., Saddow, S. E., Torchinska, T. V., Heydemann, V. D., Roth, M. D., Kordina, O., MacMillan, M. F.

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 169 KB

english, 2002

23

SiC for Biomedical Applications

Saddow, Stephen E., Frewin, Christopher L., Araujo Cespedes, Fabiola, Gazziro, Marioa, Bernadin, Evans, Thomas, Sylvia

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 794 KB

english, 2016

24

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Bernardin, Evans, Frewin, Christopher, Everly, Richard, Ul Hassan, Jawad, Saddow, Stephen

Journal:

Year:

2018

Language:

english

File:

PDF, 1.68 MB

english, 2018

25

Correction: Bernardin E.K.; et al. Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface. Micromachines, 2018, 9, 412

Bernardin, Evans, Frewin, Christopher, Everly, Richard, Ul Hassan, Jawad, Saddow, Stephen

Journal:

Year:

2018

Language:

english

File:

PDF, 155 KB

english, 2018

26

Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide

Beygi, Mohammad, Bentley, John T., Frewin, Christopher L., Kuliasha, Cary A., Takshi, Arash, Bernardin, Evans K., La Via, Francesco, Saddow, Stephen E.

Journal:

Year:

2019

Language:

english

File:

PDF, 3.34 MB

english, 2019

27

Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide

Beygi, Mohammad, Bentley, John T., Frewin, Christopher L., Kuliasha, Cary A., Takshi, Arash, Bernardin, Evans K., La Via, Francesco, Saddow, Stephen E.

Journal:

Year:

2019

File:

PDF, 3.34 MB

2019

28

Advanced Silicon Carbide Devices and Processing || 3C-SiC — From Electronic to MEMS Devices

Saddow, Stephen E., La Via, Francesco

Year:

2015

File:

PDF, 2.98 MB

2015

29

Characterization of Schottky Barrier Diodes on Heteroepitaxial Diamond on 3C-SiC/Si Substrates

Murooka, Takuya, Hatano, Mutsuko, Yaita, Junya, Makino, Toshiharu, Ogura, Masahiko, Kato, Hiromitsu, Yamasaki, Satoshi, Natal, Meralys, Saddow, Stephen E., Iwasaki, Takayuki

Journal:

IEEE Transactions on Electron Devices

Year:

2020

Language:

english

File:

PDF, 1.06 MB

english, 2020

30

Development of SOI FETs Based on Core-Shell Si/SiC Nanowires for Sensing in Liquid Environments

Bange, Romain, Bano, Edwige, Rapenne, Laetitia, Mantoux, Arnaud, Saddow, Stephen E., Stambouli, Valérie

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 3.57 MB

2019

31

Editorial for the Special Issue on SiC Based Miniaturized Devices

Saddow, Stephen E., Alquier, Daniel, Wang, Jing, LaVia, Francesco, Fraga, Mariana

Journal:

Year:

2020

File:

PDF, 164 KB

2020

32

Photoconductivity in Porous GaN Layers

M. Mynbaeva, N. Bazhenov, K. Mynbaev, V. Evstropov, S.E. Saddow, Y. Koshka, Y. Melnik

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 72 KB

english, 2001

33

Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates

C. L. Frewin, M. Jaroszeski, E. Weeber, K. E. Muffly, A. Kumar, M. Peters, A. Oliveros, S. E. Saddow

Journal:

Journal of Molecular Recognition

Year:

2009

Language:

english

File:

PDF, 450 KB

english, 2009

34

Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus

S. Rao, F. Bergamini, R. Nipoti, S.E. Saddow

Journal:

Applied Surface Science

Year:

2006

Language:

english

File:

PDF, 186 KB

english, 2006

35

On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal

I. Sankin, J.B. Casady, J.B. Dufrene, W.A. Draper, J. Kretchmer, J. Vandersand, V. Kumar, M.S. Mazzola, S.E. Saddow

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 550 KB

english, 2001

36

Characterization of single-crystal SiC polytypes using X-ray and Auger photoelectron spectroscopy

J.T. Wolan, B.A. Grayson, G. Akshoy, S.E. Saddow

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 133 KB

english, 2001

37

Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates

N.I Kuznetsov, M.G Mynbaeva, G Melnychuk, V.A Dmitriev, S.E Saddow

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 83 KB

english, 2001

38

Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

S.E Saddow, M.S Mazzola, S.V Rendakova, V.A Dmitriev

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 804 KB

english, 1999

39

Close compensation of 6H and 4H silicon carbide by silicon-to-carbon ratio control

Michael S Mazzola, Stephen E Saddow, Adolf Schöner

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 203 KB

english, 1999

40

TEM investigation of silicon carbide wafers with reduced micropipe density

S. E. Saddow, T. E. Schattner, M. Shamsuzzoha, S. V. Rendakova, V. A. Dmitriev

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 183 KB

english, 2000

41

Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

S. E. Saddow, T. E. Schattner, J. Brown, L. Grazulis, K. Mahalingam, G. Landis, R. Bertke, W. C. Mitchel

Journal:

Journal of Electronic Materials

Year:

2001

Language:

english

File:

PDF, 3.66 MB

english, 2001

42

Effect of hydrogen etching and subsequent sacrificial thermal oxidation on morphology and composition of 4H-SiC surfaces

J. T. Wolan, B. A. Grayson, J. Kohlscheen, Y. Emirov, R. Schlaf, W. Swartz, S. E. Saddow

Journal:

Journal of Electronic Materials

Year:

2002

Language:

english

File:

PDF, 234 KB

english, 2002

43

Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Z. -Q. Fang, D. C. Look, R. Chandrasekaran, S. Rao, S. E. Saddow

Journal:

Journal of Electronic Materials

Year:

2004

Language:

english

File:

PDF, 82 KB

english, 2004

44

Growth of SiC epitaxial layers on porous surfaces of varying porosity

S.E Saddow, M Mynbaeva, M.C.D Smith, A.N Smirnov, V Dimitriev

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 200 KB

english, 2001

45

[IEEE 2011 33rd Annual International Conference of the IEEE Engineering in Medicine and Biology Society - Boston, MA (2011.08.30-2011.09.3)] 2011 Annual International Conference of the IEEE Engineering in Medicine and Biology Society - Single-crystal cubic silicon carbide: An in vivo biocompatible semiconductor for brain machine interface devices

Frewin, C. L., Locke, C., Saddow, S. E., Weeber, E. J.

Year:

2011

Language:

english

File:

PDF, 520 KB

english, 2011

46

Silicon Carbide Biotechnology Volume 520 || Silicon Carbide Materials for Biomedical Applications

Saddow, Stephen E.

Year:

2012

Language:

english

File:

PDF, 780 KB

english, 2012

47

[IEEE IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology - Keystone, CO, USA (7-11 Aug. 1995)] IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology - Time Coherent Ultra-Wideband Pulse Generation Using Photoconductive Switching

Funk, E.E., Saddow, S.E., Jasper, L.J., Lee, C.H.

Year:

1994

Language:

english

File:

PDF, 164 KB

english, 1994

48

Optical characterization of n- and p-doped 4HâSiC by electroreflectance spectroscopy

Demir, Gazi, Renfro, Timothy E., Glosser, R., Saddow, S. E.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 364 KB

english, 2004

49

[IEEE IEEE MTT-S International Microwave Symposium Digest - Long Beach, CA, USA (13-15 June 1989)] IEEE MTT-S International Microwave Symposium Digest - Microstrip plasma limiter

Patel, S.D., Dubrowsky, L., Saddow, S.E., Kaul, R., Garver, R.V.

Year:

1989

Language:

english

File:

PDF, 295 KB

english, 1989

50

Band line-up determination at p- and n-type Al/4H-SiC Schottky interfaces using photoemission spectroscopy

Kohlscheen, J., Emirov, Y. N., Beerbom, M. M., Wolan, J. T., Saddow, S. E., Chung, G., MacMillan, M. F., Schlaf, R.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 463 KB

english, 2003

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